Solution-process oxide TFTs for Hybrid Low-Voltage CMOS Applications

摘要

Solution-processed indium-gallium-zinc-oxide (IGZO) TFTs were fabricated and used for hybrid low-voltage CMOS inverters, where the IGZO TFT and organic or carbon nanotube TFT were used as n- and p-type TFT, respectively. Use of high-k dielectric rendered the inverter to operate at voltages lower than 5 V supply voltage. High gain of -7.5 and -12.5 were obtained at V_(DD) = 3V for the hybrid inverters with organic and carbon nanotube p-type TFTs, respectively. Optimization of the current ratio of driver and load TFTs, depending on the field effect mobility of each TFT, is expected to further improve the performance of the hybrid inverter circuit and printing process can further lower the fabrication cost for more complicated digital/analog circuits.