Programming Characteristics of Two-Bit Sonos Type Flash Memory Using High-K Dielectric Material

摘要

In this paper, programming characteristics of two- bit SONOS (silicon-oxide-nitride-oxide-silicon) with high-k dielectric material is analysed. Two bit is used for increment of storage density instead of a single cell. Hafnium Oxide has good programming characteristics, so in this design Hafnium Oxide as high-k material is used. This material is responsible for charge trap in the device. In this paper, comparison of dual-bit SONOS using Si3N4 material with dual bit using HfO2 as charge trap layer is done. HfO2 has higher leakage than Si3N4 and data retention behaviour is also poor. In this design sentaurus Tcad tool in 40nm technology is used.