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Interfacial reactions between Cu and Sn, Sn-Ag, Sn-Bi, Sn-Zn solder under space confinement for 3D IC micro joint applications

机译:空间约束下Cu与Sn,Sn-Ag,Sn-Bi,Sn-Zn焊料之间的界面反应,用于3D IC微接头应用

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Recently, three-dimensional integrated circuit (3D IC) integration technology consisting of TSV and micro joints has been viewed as one of the very promising solutions to go beyond Moore's law. Typical solder joints for 3D IC stacking technique under development today has a solder volume about 1000 μm3, which is roughly 1/500 that of a conventional flip-chip solder joint with usually an 100 μm in diameter. One well-perceived effect of such a small solder volume is the solder joint would have very high possibility to end in a relatively large fraction of intermetallic compounds (IMCs) after common reflowing or thermal compression bonding process. Under this circumstance, instead of solder, the mechanical properties of IMCs and other reaction-induced microstructural changes and characteristics will undoubtedly play dominant roles on the reliability of the micro joints. In this study, solid-state interfacial reactions under a very confined space between Cu and Sn, Sn-Ag, Sn-Bi, Sn-Zn solders are systematically investigated. The objective of this paper is not merely to propose and identify some critical reliability concerns arising from interfacial reactions but to provide essential data for microelectronic packaging industry to the design of sturdy enough micro solder joints for multichip stacking applications. Sandwich structures of Cu/Solder/Cu are fabricated through chip-to-chip thermal compression bonding process. The thickness of the solder layer in this study is well-controlled at 10 μm. High temperature storage tests are conducted by isothermal aging at 120 °C, 150 °C, 180 °C, and 200 °C for different time periods, respectively. Issues to be discussed in this paper include (a) Impingement behavior of IMC grains after solid-state isothermal aging, (b) Rise of concentrations of minor inert alloying constituents in low solder volume joint, (c) Promising approach to reduce the growth rate of Cu-Sn - eactants within limited solder volume joint. These critical issues will be proposed and discussed through experimental evidence, and the implications based on these finding will be discussed as well.
机译:最近,由TSV和微接头组成的三维集成电路(3D IC)集成技术被视为超越摩尔定律的非常有前途的解决方案之一。今天正在开发的用于3D IC堆叠技术的典型焊点的焊锡量约为1000μm3,约为直径通常为100μm的常规倒装芯片焊点的1/500。如此小焊料量的一个广为人知的效果是,在常见的回流或热压键合工艺之后,焊点极有可能终止相对较大比例的金属间化合物(IMC)。在这种情况下,IMC的机械性能和其他反应引起的微结构变化和特性无疑会代替焊料,对微接头的可靠性起主要作用。在这项研究中,系统地研究了在Cu和Sn,Sn-Ag,Sn-Bi,Sn-Zn焊料之间非常狭窄的空间内的固态界面反应。本文的目的不仅是提出和确定界面反应引起的一些关键可靠性问题,而且还为微电子封装行业提供足够的数据,以设计用于多芯片堆叠应用的足够坚固的微焊点。铜/焊料/铜的夹层结构是通过芯片到芯片的热压键合工艺制造的。在这项研究中,焊料层的厚度被很好地控制在10μm。通过分别在120°C,150°C,180°C和200°C的不同时间进行等温老化来进行高温存储测试。本文要讨论的问题包括(a)固态等温老化后的IMC晶粒的冲击行为;(b)低焊料量接头中次要惰性合金成分的浓度上升;(c)降低生长速率的有前途的方法Cu-Sn-有限焊料体积接缝内的表面活性剂。这些关键问题将通过实验证据提出和讨论,并且还将讨论基于这些发现的含义。

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