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Uncooled digital IRFPA-family with 17 μm pixel-pitch based on amorphous silicon with massively parallel Sigma-Delta-ADC readout

机译:未冷却的数字IRFPA系列,其像素间距为17μm,基于非晶硅,具有大规模并行的Sigma-Delta-ADC读数

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This paper presents the results of an advanced digital IRFPA-family developed by Fraunhofer IMS. The IRFPA-family compromises the two different optical resolutions VGA (640 × 480 pixel) and QVGA (320 × 240 pixel) by using a pin-compatible detector board. The uncooled IRFPAs are designed for thermal imaging applications in the LWIR (8 .. 14μm) range with a full-frame frequency of 30 Hz and a high thermal sensitivity. The microbolometer with a pixel-pitch of 17μm consists of amorphous silicon as the sensing layer. By scaling and optimizing our previous microbolometer technology with a pixel-pitch of 25μm we enhance the thermal sensitivity of the microbolometer. The microbolometers are read out by a novel readout architecture which utilizes massively parallel on-chip Sigma-Delta-ADCs. This results in a direct digital conversion of the resistance change of the microbolometer induced by incident infrared radiation. To reduce production costs a chip-scale-package is used as vacuum package. This vacuum package consists of an IR-transparent window with an antireflection coating and a soldering frame which is fixed by a wafer-to-chip process directly on top of the CMOS-substrate. The chip-scale-package is placed onto a detector board by a chip-on-board technique. The IRFPAs are completely fabricated at Fraunhofer IMS on 8" CMOS wafers with an additional surface micromachining process. In this paper the architecture of the readout electronics, the packaging, and the electro-optical performance characterization are presented.
机译:本文介绍了Fraunhofer IMS开发的高级数字IRFPA系列的结果。 IRFPA系列通过使用与引脚兼容的检测器板来折衷两种不同的光学分辨率VGA(640×480像素)和QVGA(320×240像素)。未冷却的IRFPA是专为LWIR(8..14μm)范围内的热成像应用而设计的,其全帧频率为30 Hz,并且具有很高的热敏性。像素间距为17μm的微辐射热计由非晶硅作为传感层。通过以25μm的像素间距缩放和优化我们以前的测微辐射热计技术,我们提高了测微辐射热计的热灵敏度。微型测辐射热计由新颖的读取架构读取,该架构利用大规模并行片上Sigma-Delta-ADC。这导致了由入射红外辐射引起的测微辐射热计的电阻变化的直接数字转换。为了降低生产成本,将芯片级封装用作真空封装。该真空封装包括一个带防反射涂层的IR透明窗口和一个焊接框架,该焊接框架通过晶圆到芯片工艺直接固定在CMOS基板的顶部。芯片级封装通过板上芯片技术放置在检测板上。 IRFPA通过额外的表面微加工工艺在Fraunhofer IMS上完全在8“ CMOS晶圆上完成制造。本文介绍了读出电子设备的结构,封装和电光性能表征。

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