ageing; field programmable gate arrays; insulated gate bipolar transistors; nondestructive testing; power transistors; short-circuit currents; FPGA; aged IGBT module; current 6 kA; high-power IGBT modules; level control accuracy; nondestructive testing equipment; protection circuit; short circuit testing; time 10 ns; ultralow stray inductance; voltage 1.1 kV; voltage 1.7 kV; Capacitors; Field programmable gate arrays; Inductance; Insulated gate bipolar transistors; Logic gates; Testing; Timing; Degradation; Insulated Gate Bipolar Transistor (IGBT); Non-destructive testing (NDT); Power module; Short-circuit;
机译:借助6kA / 1.1kV无损测试系统研究MW规模IGBT电源模块短路期间的振荡
机译:1.2 kV SiC MOSFET功率模块短路测试的退化指标研究
机译:高压短路测试中高压压装IGBT模块的鲁棒性评估
机译:通过6 KA / 1.1 kV非破坏性检测设备调查老年IGBT模块的短路行为
机译:15 kV SiC IGBT实现中压功率转换
机译:细胞内钙的功能偶联和电压门控Kv1.1 /Kvβ1.1A型K +通道的失活
机译:用6 ka / 1.1 kV无损检测设备研究老化IGBT模块的短路特性