A 79GHz variable gain low-noise amplifier and power amplifier in 28nm CMOS operating up to 125°C

摘要

This paper presents a 79GHz variable gain low-noise amplifier (LNA) and power amplifier (PA), both implemented in 28nm CMOS, and measured at temperatures from 27°C to 125°C. The 4-gain steps LNA and the 17dB gain PA are based on a multistage common source neutralized push-pull topology. The LNA achieves a gain of 23.8dB and a noise figure (NF) of 4.9dB, and the PA achieves a maximum power added efficiency (PAE) of 13.8% and a saturated output power (Psat) of 12.3dBm. At 125°C both the LNA and the PA are functional with NF < 7dB and Psat >11dBm. This paper demonstrates the feasibility of using scaled CMOS technology (28nm) for automotive radars.