Characterization methods to replicate EOS fails

摘要

Two methods are proposed to complement traditional TLP methods for characterization of devices and ICs for EOS. These are used to determine the power profile: the minimum power needed to cause damage as function of stress duration. The method is applied to analyze typical EOS problems, which is demonstrated by an extensive discussion of three examples. Stress above the power profile level leads to EOS damage. It is shown that this can be independent of pulse duration.