SiGe HBT mm-wave DC coupled ultra-wide-band low noise monolithic amplifiers

摘要

Design guide lines are given for developing SiGe HBT mm-wave d.c. coupled ultra-wide-band low noise monolithic amplifiers. An ultra wide band LNA and two mm-wave TIAs for 40 Gbps and 100 Gbps applications are proposed. The LNA has S=11 dB and a 3-dB bandwidth of 88 GHz. The 40 Gbps TIA has a new topology, allowing a DC coupled performance, 54 dBΩ transimpedance gain, 37 GHz bandwidth, consumes 59 mW power and its area is 0.23 mm. The 100 Gbps TIA has 43 dBΩ transimpedance gain, 79.4 GHz bandwidth, consumes 37 mW power and its area is only 0.05 mm. These amplifiers are implemented in a 0.12 µm SiGe HBT technology (f = 350 GHz/f = 450 GHz). Output eye diagram plots were obtained to verify their performances.