Transport of NIST Graphene Quantized Hall Devices and Comparison with AIST Gallium-Arsenide Quantized Hall Devices

摘要

Two graphene quantized Hall resistance (QHR) devices made at the National Institute of Standards and Technology (NIST) were hand carried to the National Institute for Advanced Industrial Science and Technology (AIST) and compared to a GaAs QHR device and a pmb100 Ω standard resistor. Measurement of the pmb100 Ω resistor with the graphene QHR devices agreed within pmb5 × pmb10~(-9) of the pmb100 Ω resistor GaAs measurements. After the initial measurements, the carrier density of the graphene devices was adjusted at AIST to restore the device properties to operate at low magnetic fields of 4 T to 6 T.