Comparison of quantized Hall resistances R/sub H/(2) and R/sub H/(4) of a GaAs/AlGaAs heterostructure device

摘要

Quantized Hall resistances R/sub H/(4) and R/sub H/(2) of a GaAs/AlGaAs heterostructure were compared with reference resistors whose values are close to h/4e/sup 2/ or h/2e/sup 2/. The values of the reference resistors were compared with a 100 ohm standard resistor via a cryogenic current comparator (CCC) resistance bridge. Results showed that (4/spl times/R/sub H/(4)-2/spl times/R/sub H/(2))/2/spl times/R/sub H/(2)=(0.037/spl plusmn/0.019)/spl times/10/sup -6/.