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METHOD OF THE SEMICONDUCTORS QUANTIZED HALL RESISTANCE CONTACTLESS DETERMINATION AND DEVICE FOR ITS IMPLEMENTATION

机译:半导体量化霍尔电阻电导率的确定方法及其实现方法

摘要

FIELD: defectoscopy.;SUBSTANCE: use for nondestructive testing of semiconductors parameters containing degenerate electron gas. Summary of invention is in the fact that the sample is cooled down, subjected to varying permanent magnetic field with induction B and an alternating magnetic field varying with an audio frequency having an amplitude, which is many times smaller than the induction B, the sample is irradiated with SHF radiation of a given frequency, selecting the radiation frequency is chosen to be less than the frequency of charge carriers collisions with semiconductor atoms, recording the signal proportional to the second derivative of power passing through the diaphragm and a sample of the SHF radiation as a function of the induction B, measuring the magnetic field induction value corresponding to the signal maximum, and determining the quantized Hall resistance.;EFFECT: providing the possibility of the quantized Hall resistance determining in the sample local regions.;2 cl, 2 dwg
机译:领域:缺陷检查法;物质:用于包含退化电子气的半导体参数的非破坏性测试。发明内容是这样的事实,即样品被冷却,经受随着感应B变化的永久磁场和随振幅变化的音频频率而变化的交变磁场,该振幅比感应B小很多倍。用给定频率的SHF辐射照射,选择的辐射频率应选择为小于与半导体原子碰撞的载流子的频率,并记录与通过光阑的功率二阶导数成比例的信号和SHF辐射的样本作为感应B的函数,测量对应于信号最大值的磁场感应值,并确定量化的霍尔电阻。;效果:提供在样品局部区域中确定量化的霍尔电阻的可能性; 2 cl,2 dwg

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