Multi-bandgap III-V on insulator wafer fabricated by quantum well intermixing for III-V CMOS photonics platform

摘要

We have investigated a fabrication procedure of a multi-bandgap III-V on insulator (III-V-OI) wafer by quantum well intermixing for active/passive integration on III-V CMOS photonics platform. We have sucessfully achieved approximately 50-nm wavelength shift in photoluminecense peak on the III-V-OI wafer by P impantation with 40 keV implant energy.