首页> 外文会议>Institute of Electrical and Electronics Engineers International Symposium on Power Semiconductor Devices ICs >An integrated tri-mode non-inverting buck-boost DC-DC converter with segmented power devices and power transmission gate structure
【24h】

An integrated tri-mode non-inverting buck-boost DC-DC converter with segmented power devices and power transmission gate structure

机译:具有分段功率器件和功率传输门结构的集成三模式同相降压-升压DC-DC转换器

获取原文

摘要

This paper presents a tri-mode non-inverting buck-boost DC-DC converter with segmented power devices, power transmission gate structure and dead-time control to improve the power conversion efficiency and the overall size. The proposed DC-DC converter accepts an input voltage, Vin from 2.7V to 5V and produces an output, Vout ranging from 1V to 6V. A peak power conversion efficiency of 94% is observed from the simulation result. It is designed to operate in buck, boost or buck-boost mode while maintaining peak efficiency. Unlike existing switch-mode power supplies, a power transmission gate is used as the high-side driver to eliminate external components such as the bootstrap circuit. This would save a significant amount of PCB space at the expense of only 18% silicon area overhead. The proposed IC is designed using Dongbu HiTek's 0.18μm UVCMOS technology.
机译:本文提出了一种具有分段功率器件,功率传输门结构和死区时间控制的三模式同相降压-升压型DC-DC转换器,以提高功率转换效率和整体尺寸。提出的DC-DC转换器接受2.7V至5V的输入电压Vin,并产生1V至6V的输出Vout。从仿真结果可以看出,峰值功率转换效率为94%。它设计为以降压,升压或降压-升压模式工作,同时保持峰值效率。与现有的开关电源不同,功率传输门用作高端驱动器,以消除诸如自举电路之类的外部组件。这将节省大量的PCB空间,而仅以18%的硅面积开销为代价。拟议的集成电路是使用Dongbu HiTek的0.18μmUVCMOS技术设计的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号