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Impact of a laser pulse on HfO2-based RRAM cells reliability and integrity

机译:激光脉冲对基于HFO2的RRAM细胞可靠性和完整性的影响

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Several NVM technologies have emerged during the last 10 years. These technologies offer solutions for the replacement of the Flash technology, which is facing downsizing limits [1]. Moreover these solutions propose lower switching energy and faster operations compared to the state of the art for Flash, and thus, are seen as an opportunity for the rise of the IoT market. But one of the main concerns regarding IoT is the protection of the data. Contrary to Flash, security of the data in emerging NVM is yet to be evaluated. In order to verify capability of the technology in terms of data integrity, we propose to investigate reliability and integrity of HfO2-based Resistive RAM (OxRRAM). This paper details the experimental protocol defined for laser-based attacks, shows that a laser pulse can affect the information stored in a single OxRRAM bit. The occurring phenomenon is then explained by mean of thermal and electrical simulations.
机译:在过去的10年中出现了几种NVM技术。这些技术提供了更换闪存技术的解决方案,这面临缩小限制的缩小限制[1]。此外,与闪光技术相比,这些解决方案提出了更低的开关能量和更快的操作,因此被视为IOT市场崛起的机会。但关于物联网的主要问题之一是保护数据。与Flash相反,尚未评估新兴NVM中数据的安全性。为了在数据完整性方面验证技术的能力,我们建议研究HFO2基电阻RAM(OXRRAM)的可靠性和完整性。本文详细说明了为基于激光的攻击定义的实验协议,示出了激光脉冲可以影响存储在单个OXRRAM位中的信息。然后通过热和电模拟的平均来解释发生的现象。

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