RRAM MEMORY CELL AND PROCESS TO INCREASE RRAM MATERIAL AREA IN AN RRAM MEMORY CELL

摘要

A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the bottom region of the cylindrical electrode.