Comparative Evaluation of Static and Dynamic Performance of 1.2-kV SiC Power Switches

摘要

This paper presents a comprehensive experimental evaluation and comparison of several state-of-the-art 1.2-kV silicon carbide (SiC) power switches. Specifically, the latest generation of planar and trench SiC MOSFETs as well as the cascode SiC JFET are characterized and compared with respect to their static and dynamic performance. The switching performance of these devices are evaluated with both their intrinsic body-diode and external SiC Schottky Barrier Diode (SBD) as the freewheeling device. Based on the evaluated performance, the advantages and disadvantages of tested SiC devices are summarized.