首页> 外文会议>Annual IEEE Applied Power Electronics Conference and Exposition >Hardware Design of a 1.7 kV SiC MOSFET Based MMC for Medium Voltage Motor Drives
【24h】

Hardware Design of a 1.7 kV SiC MOSFET Based MMC for Medium Voltage Motor Drives

机译:基于1.7 kV SiC MOSFET的MMC硬件设计中型电动电动机驱动器

获取原文

摘要

This paper presents the hardware design of a 7 kV dc bus, 1 MVA, 0-1,000 Hz, 1.7 kV SiC MOSFET based medium voltage variable speed drive (MVVSD). The system is based on a 7-level three-phase modular multilevel converter (MMC). The full in-depth design, development, and testing of this prototype are provided, including MMC submodule development, arm inductor design, control hardware realization, system integration and thermal analysis. Finally, experimental results demonstrate the excellent performance of the 1.7 kV SiC MOSFET based submodule and the 1 MW, 7 kV MVVSD as a unity in various operation modes.
机译:本文介绍了7 kV直流总线的硬件设计,1个MVA,0-1,000 Hz,1.7 kV SiC MOSFET基础电压变速驱动(MVVSD)。该系统基于7级三相模块化多级转换器(MMC)。提供了本原型的完整深度设计,开发和测试,包括MMC子模块开发,ARM电感设计,控制硬件实现,系统集成和热分析。最后,实验结果证明了基于1.7 kV SiC MOSFET基于1.7 kV SiC MOSFET的优异性能和1 MW,7 kV MVVSD作为各种操作模式的统一。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号