Optimal Control Strategies for SiC MOSFET and Si IGBT Based Hybrid Switch

摘要

The hybrid switch consisting of a high power Si IGBT and a low power SiC MOSFET has been reported to achieve reduction of losses recently. In this paper, a novel integrated gate driver is proposed for the Si/SiC hybrid switch to achieve its optimized performance and cost-effectiveness. A DC/DC boost converter based on the hybrid switch and the integrated gate driver is built and tested to demonstrate the effectiveness of the gate driver and the superior performance of the hybrid switch. Experimental results show that the Si/SiC hybrid switch with the optimal control strategy can achieve excellent thermal performance and greatly improve the power handling capability or switching frequency of the DC/DC converter compared to the Si IGBT solution.