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CD variations from non-trivial mask related factors

机译:非琐碎掩模相关因素的CD变化

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摘要

Mask critical dimension (CD) control relies on advanced write tools and resist processes. However, a specified write tool and process does not necessarily guarantee high mask quality. As the mask feature size shrinks to below 500 nm, there are other mask-related factors that can also significantly affect the mask performance. This paper discusses the impact of those non-trivial factors, such as mask writing tool and process control, calibration of mask CD metrology, blank quality of attenuated phase shift mask (ATPSM), pellicle degradation due to 193 nm laser irradiation, and profile of mask features, etc.
机译:屏蔽关键尺寸(CD)控制依赖于高级写入工具和抵制进程。但是,指定的写入工具和过程不一定保证高掩模质量。由于掩模特征大小缩小到500 nm以下,还有其他与掩模相关的因素也可以显着影响掩模性能。本文讨论了那些非平凡因素的影响,如面膜书写工具和过程控制,掩模CD计量的校准,减毒相移掩模(ATPSM)的空白质量,由于193nm激光照射引起的薄膜降解,以及掩码功能等

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