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CD variations from non-trivial mask related factors

机译:非平凡面罩相关因素的CD变化

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摘要

Mask critical dimension (CD) control relies on advanced write tools and resist processes. However, a specified write tool and process does not necessarily guarantee high mask quality. As the mask feature size shrinks to below 500 nm, there are other mask-related factors that can also significantly affect the mask performance. This paper discusses the impact of those non-trivial factors, such as mask writing tool and process control, calibration of mask CD metrology, blank quality of attenuated phase shift mask (ATPSM), pellicle degradation due to 193 nm laser irradiation, and profile of mask features, etc.
机译:掩模临界尺寸(CD)控制依赖于高级写入工具和抗蚀剂工艺。但是,指定的写入工具和过程不一定能保证较高的掩模质量。随着掩模特征尺寸缩小到500 nm以下,还有其他与掩模相关的因素也可能会严重影响掩模性能。本文讨论了这些重要因素的影响,例如掩模写入工具和过程控制,掩模CD计量学的校准,衰减相移掩模(ATPSM)的空白质量,由于193 nm激光辐照导致的薄膜降解以及薄膜的轮廓遮罩功能等

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