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Numerical and theoretical analysis on voltage and time domain dynamic range of scaled CMOS circuits

机译:标度CMOS电路电压和时域动态范围的数值和理论分析

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It is believed that the time-domain resolution of a digital signal edge transition is superior to the voltage resolution of an analog signal in advanced CMOS processes[1], [2]. The reasoning behind this is that operating voltage has been reducing, making the signal more vulnerable to noise power due to scaling. On the other hand, in time domain, scaling has resulted to increase in frequency and therefore design of faster circuits, while also contributing to reduction of jitter. However, this is a concept that has not yet been quantitatively examined. This paper aims at verifying the effectiveness of the time-domain circuits over voltage-domain circuits in terms of their dynamic range performances by simulations as well as by theoretical analysis, especially in the scaled nano-meter processes. It has been shown that for a given technology the time domain dynamic range is superior to the voltage domain dynamic range by a factor of (ωT /B)2 where ωT is the unity gain frequency and B is the bandwidth.
机译:可以相信,在先进的CMOS工艺中,数字信号沿跃迁的时域分辨率优于模拟信号的电压分辨率[1],[2]。其背后的原因是工作电压一直在降低,由于缩放,使得信号更容易受到噪声功率的影响。另一方面,在时域中,缩放已导致频率增加,因此设计了更快的电路,同时也有助于降低抖动。但是,这是尚未被定量研究的概念。本文旨在通过仿真和理论分析,尤其是在按比例缩小的纳米工艺中,从时域电路的动态范围性能方面验证时域电路相对于电压域电路的有效性。已经显示出,对于给定的技术,时域动态范围优于电压域动态范围达(ωT/ B)2倍,其中ωT是单位增益频率,B是带宽。

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