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Design of Area-Efficient, Low-Quiescent-Current LDOs for Chip-Level Power Management

机译:用于芯片级电源管理的区域高效,低静态电流LDO的设计

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In this paper, design methodology of area-efficient and low-quiescent-current low-dropout regulators (LDOs) for chip-level power management is proposed. As LDO chip size is dominated by the large size power transistor, guidelines are given to minimize its size when design specifications such as the dropout voltage, the minimum input voltage and the maximum load current are given. The reduced power transistor size also helps to maintain satisfactory error amplifier slew-rate at low quiescent current consumption. Stability of LDO designed under the proposed methodology is thoroughly studied. Extensive simulations are done to verify the stability study.
机译:本文提出了芯片级电源管理的面积效率和低静止电流低压丢失调节器(LDO)的设计方法。由于LDO芯片尺寸由大尺寸功率晶体管主导,因此在给出了诸如丢弃电压的设计规范,最小输入电压和最大负载电流之类的设计规范时,提供了指南。降低的功率晶体管尺寸还有助于在低静态电流消耗下保持令人满意的误差放大器摆率。彻底研究了LDO的稳定性,彻底研究了所提出的方法。进行广泛的模拟以验证稳定性研究。

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