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Impedance analysis of Nb2O5 doped BaTiO3-Na0.5Bi0.5TiO3 ceramics

机译:Nb 2 O 5 掺杂的BaTiO 3 -Na 0.5 Bi 0.5 的阻抗分析TiO 3 陶瓷

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BaTiO3-based MLCC materials were limited for high temperature applications (temperature range up to 200°C), due to their low Curie temperatures. The addition of Na0.5Bi0.5TiO3(NBT) component in BaTiO3(BT) based ceramics was found to increase the Curie temperature, without sacrificing the dielectric constant. The Curie temperature was reported to increase from 125°C to 156°C with addition up to 10mol%, making it possible to satisfy the X8R or X9R criterions. In addition, the small amount of Nb2O5 dopant in the system leads to a diffused dielectric maxima and improved temperature stability. The NBT-BT with 2wt% Nb2O5 addition was found to exhibit a core-shell structure, while maintaining the dielectric constant at about 2500. To analyze the electrical microstructure variation, the obtained impedance data was fitted by a 4RC equivalent circuit, corresponding to the core, shell, grain boundary, and ceramic/electrode interface regions. All the electrical properties, including the capacitance, activation energy, and conductivity could be well explained by using this equivalent circuit.
机译:由于BaTiO3基MLCC材料的居里温度低,因此其在高温应用(温度范围高达200°C)中受到限制。发现在基于BaTiO3(BT)的陶瓷中添加Na0.5Bi0.5TiO3(NBT)组分可提高居里温度,而不会牺牲介电常数。据报道,居里温度从125°C升高到156°C,添加量最高达到10mol%,从而有可能满足X8R或X9R标准。此外,系统中少量的Nb2O5掺杂剂会导致扩散的电介质最大值和改善的温度稳定性。发现添加2wt%Nb2O5的NBT-BT表现出核-壳结构,同时保持介电常数在2500左右。为了分析电微结构变化,通过4RC等效电路拟合获得的阻抗数据,对应于核,壳,晶界和陶瓷/电极界面区域。使用该等效电路可以很好地解释所有的电特性,包括电容,活化能和电导率。

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