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Growth of Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal and the piezoelectric properties

机译:Ca 3 Ta(Ga 0.5 Al 0.5 3 Si 2 O的生长 14 压电单晶及其压电性能

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We grew Ca3Ta(Ga0.5Al0.5)3Si2O14 piezoelectric single crystal with a diameter of 1 inch by Czochralski method and the physical properties were investigated. The grown crystal indicated high transparency with the yellow color. In addition, there was no crack in the crystal. By the powder X-ray diffraction measurement, the grown crystal was a single phase of langasite-type structure and lattice parameters, a- and c-axes lengths, were decreased by the Al substitution. The back-reflection Laue image revealed that the grown crystal was single crystal and crystalline facets derived from (0 0 1) plane. Actual chemical composition of grown crystal was little different from the nominal composition with stoichiometric composition.
机译:用直拉法生长了直径为1英寸的Ca3Ta(Ga0.5Al0.5)3Si2O14压电单晶,并研究了其物理性能。生长的晶体显示出高度透明的黄色。另外,晶体中没有裂纹。通过粉末X射线衍射测量,所生长的晶体是单晶硅铝石型结构,并且通过Al取代降低了晶格参数,a轴和c轴长度。后向反射劳厄图像显示,生长的晶体是单晶,并且晶面源自(0 0 1)平面。生长晶体的实际化学组成与化学计量组成的标称组成几乎没有差异。

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