An Improved Synthesis Method of Logic Circuits based on the NMOS-like RRAM Gates

摘要

The NMOS-like RRAM gates are a set of in-array high-performance RRAM gates. This work proposes an improved synthesis method of logic circuits based on the NMOS-like RRAM gates. The operations of the generated circuits are pipelined, and the RRAM cells of the first-stage logic block are shared by different operations. The synthesis results on some benchmark circuits show that the proposed synthesis method is able to generate the logic circuits with smaller area compared with those generated from the previous NMOS-like RRAM gates based synthesis method.