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Monolithic Integration of Fluorinated Metal-Oxide Thin-Film Transistor and Hydrogenated Amorphous Silicon Photo-Diode

机译：氟化金属氧化物薄膜晶体管和氢化非晶硅光电二极管的单片集成

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Metal-oxide thin-film transistor (TFT) based on amorphous indium-gallium-zinc oxide (IGZO) subjected to a plasma fluorination treatment has been reported to exhibit improved resilience against hydrogen-induced degradation. Demonstrated presently is an active-matrix consisting of monolithically integrated fluorinated IGZO TFTs and hydrogenated amorphous silicon photo-diodes.

机译：据报道，金属氧化物薄膜晶体管（TFT）经受氟化处理的血浆氟化处理的非晶铟 - 镓 - 氧化锌（IgZO），表现出改善的抗氢引起的降解的抵抗能力。目前证明是一种活性基质，由单片整合的氟化IgZO TFT和氢化非晶硅光电二极管组成。

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《IEEE International Conference on Solid-State and Integrated Circuit Technology 》|2020年|1-4|共4页
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Man Wong; Sisi Wang; Zhichao Zhou;
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Thin film transistors; Resistance; Electrodes; Degradation; Plasmas; Resilience; Monolithic integrated circuits;

机译：薄膜晶体管;电阻;电极;降解;等离子体;弹性;单片集成电路;

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1. Dual-Gate Characteristics of Amorphous $ hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors [J] . Takechi K., Nakata M., Azuma K., Electron Devices, IEEE Transactions on . 2009 ,第9期

机译：与氢化非晶硅薄膜晶体管相比，非晶$ hbox {InGaZnO} _ {4} $薄膜晶体管的双栅特性
2. A Comparison of Photo-Induced Hysteresis Between Hydrogenated Amorphous Silicon and Amorphous IGZO Thin-Film Transistors [J] . Ha Tae-Jun, Cho Won-Ju, Chung Hong-Bay, Journal of nanoscience and nanotechnology . 2015 ,第9期

机译：氢化非晶硅与非晶IGZO薄膜晶体管之间光致磁滞的比较
3. Comparison of Ultraviolet Photo-Field Effects between Hydrogenated Amorphous Silicon and Amorphous lnGaZnO_4 Thin-Film Transistors [J] . Kazushige Takechi, Mitsuru Nakata, Toshimasa Eguchi, Japanese journal of applied physics . 2009 ,第1期

机译：氢化非晶硅与InGaZnO_4薄膜晶体管的紫外光场效应比较
4. Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses [C] . Han-Wen Liu, Chien-Hung Lin, Fang-Hsing Wang International Symposium on Next-Generation Electronics . 2016

机译：直流偏压下氢化非晶硅薄膜晶体管阈值电压退化的恢复特性
5. High performance hydrogenated amorphous silicon thin-film transistor structure [D] . Chen, Chun-Ying. 1997

机译：高性能氢化非晶硅薄膜晶体管结构
6. Monolithic Integration of a Silicon Nanowire Field-Effect Transistors Array on a Complementary Metal-Oxide Semiconductor Chip for Biochemical Sensor Applications [O] . Paolo Livi, Moria Kwiat, Amir Shadmani, -1

机译：用于生化传感器应用的互补金属氧化物半导体芯片上的硅纳米线场效应晶体管阵列的单片集成
7. An analytical capacitance model for a hydrogenated amorphous silicon based thin-film transistor [O] . Hafdi Z. 2011

机译：氢化非晶硅基薄膜晶体管的分析电容模型

Monolithic Integration of Fluorinated Metal-Oxide Thin-Film Transistor and Hydrogenated Amorphous Silicon Photo-Diode

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