Compact modeling and electro-thermal simulation of hot carriers effect in analog circuits

摘要

A new electro-thermal compact model of MOSFET that takes the channel hot carriers (CHC) effects on the transistor performances into account, including degradation and recovery, is proposed in this paper. The new model deals with the mobility degradation as well as the threshold voltage drift and recovery related to the Si/SiO interface traps density. The substrate current, indicator of the device degradation under CHC is also provided in this model. The model is validated with simulations of a single transistor and at a chip level under various stress conditions. Thanks to our electro-thermal simulation tool and to this model, we can predict circuit degradation and recovery at different electrical and thermal stress conditions.