Simultaneous achievement of high-quality oxide passivation of nc-Si and suppression of Er de-activation by silicon-rich silicon oxide/Er-doped silicon nitride multilayers

摘要

The effect of nc-Si/Er environment is investigated. We find that by using a silicon-rich silicon-oxide/SiN:Er multilayers, high quality nc-Si passivation and suppression of Er de-activation can be achieved simultaneously for optimal Er luminescence