High Speed Selective-Area-Epitaxial Ge-on-SOI PIN Photo-detector Using Thin Low Temperature Si{sub}0.8Ge{sub}0.2 Buffer by Ultra-High-Vacuum Chemical Vapor Deposition

摘要

Ge/SiGe/SOI PIN photodiodes with 15～17GHz bandwidth at 1550nm, external quantum efficiency of 20%～27% at 850nm, and bulk dark current density of 1.5～2mA/cm{sup}2, using low temperature Si{sub}0.8Ge{sub}0.2 buffer and without cyclic annealing were demonstrated.