III-V semiconductors; MMIC; S-parameters; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; silicon compounds; substrates; thermal analysis; wide band gap semiconductors; AlGaN-GaN; HEMT; MMIC; SiC; design optimization; equivalent circuit; high electron mobility transistor; high frequency application; monolithic microwave integrated circuit; on-wafer S-parameter measurement; silicon carbide substrate; size 0.25 mum; temperature -40 C to 150 C; temperature effect modelling; thermal characterisation; Aluminum gallium nitride; Gallium nitride; HEMTs; Silicon carbide; Temperature; Temperature dependence; Temperature measurement; AlGaN/GaN/SiC HEMT; equivalent circuit parameter; on-wafer measurement; temperature coefficient;
机译:基于脉冲I-V测量的在硅和蓝宝石衬底上生长的AlGaN / GaN HEMT的热特性
机译:碳化硅衬底上AlGaN / GaN HEMT的深能级和非线性表征
机译:半绝缘碳化硅衬底上的高功率微波GaN / AlGaN HEMT
机译:高频应用碳化硅基材上的AlGaN / GaN HEMT的热表征
机译:研究常关模式的AlGaN / GaN MOS HEMT器件,该器件利用栅极后退和p-GaN栅极结构以及带有醛生长的高k栅极绝缘体来实现高功率应用。
机译:在6英寸N掺杂的低电阻率SiC基板上的常压P-GaN栅极AlGaN / GaN Hemts的高热耗散
机译:在绝缘碳化硅衬底上生长的AlGaN / GaN HEMT的功率RF操作