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Application of TCAD in a development of a fully complementary vertical PNP IC technology for high performance analog applications

机译:TCAD在高性能模拟应用中全互补垂直PNP IC技术开发中的应用

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Application of process and device TCAD is used for design and optimization of process integration of fully complementary Vertical PNP (VPNP) transistor into a Bi(CMOS) technology [1]. The paper addresses two selected tasks - optimization of vertical isolation and process integration of P-collector for the VPNP.
机译:工艺和装置TCAD的应用用于完全互补垂直PNP(VPNP)晶体管进入BI(CMOS)技术的过程集成的设计和优化[1]。本文解决了两个选定的任务 - 优化VPNP的P型电池的垂直隔离和流程集成。

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