Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si

摘要

The refractive index and the interface state were studied for SiO2/Si and Si3N4/SiO2/Si using ellipsometry and the conductance method. The local optical performance of interface structure is modeled and calculated by layered capacitors method. The fitting ellipsometry dates agreed with its measurement and the calculate date of refractive index cross the SiO2/Si interface showed the similar trend with the results of ellipsometry. And the correlation between the thickness of the interface structure, the oxidation state, the refractive index, and the interface state is analyzed.