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Magnetic properties and photoluminescence of undoped and transition metal doped AlN nanorods

机译:未掺杂和过渡金属掺杂AlN纳米棒的磁性和光致发光

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The undoped and transition metal (TM) -doped AlN (AlN:Cu and AlN:Fe) nanorods on silicon substrates were fabricated using a catalysis-free vapor phase method. All the nanorods exhibited high crystalline quality and preferred c-axis orientation. Room-temperature photoluminescence (PL) measurement revealed that undoped AlN nanorods exhibited strong oxygen-related impurity emission at ~3.25 eV. However, AlN:Fe nanorods had two strong ultraviolet emissions at 3.69 and 6.02 eV which could be attributed to Fe{sup}(3+)-related and band-edge emission, respectively. Both the Cu and Fe{sup}(3+)-doped AlN nanorods are ferromagnetic. The spontaneous saturated magnetization of the AlN:Cu and AlN:Fe nanorods were determined to be 0.38 and 3.5 emu/cm{sup}3 at room temperature, respectively. The Fe-doped AlN nanorods not only exhibited ferromagnetism but also significantly enhanced the band-edge emission as compared to the undoped AlN nanorods.
机译:使用可催化的气相法制造在硅基板上的未掺杂和过渡金属(TM) - 掺杂的AlN(ALN:Cu和Aln:Fe)纳米棒。所有纳米棒都表现出高晶体质量和优选的C轴取向。室温光致发光(PL)测量显示,未掺杂的AlN纳米棒在〜3.25eV中表现出强氧相关的杂质发射。然而,ALN:Fe Nanoorods在3.69和6.02EV中具有两个强烈的紫外线排放,其可分别归因于FE {SUP}(3 +)相关和带边缘发射。 Cu和Fe {sup}(3 +) - 掺杂的Aln纳米棒是铁磁性的。在室温下分别测定ALN:Cu和AlN:Fe纳米棒的自发饱和磁化为0.38和3.5Mu / cm {sup} 3。与未掺杂的AlN纳米棒相比,Fe掺杂的AlN纳米棒不仅表现出铁磁性,而且显着提高了带边缘发射。

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