Impact of Line Resistance Variations on Crosstalk Delay and Noise in Multilayer Graphene Nano Ribbon Interconnects

摘要

Impact of line resistance variations on the crosstalk induced delay and noise is investigated in Multilayer Graphene Nano Ribbon interconnects (MLGNRs) with the help of Spectre simulations in Cadence Virtuoso design environment. Simulations are performed for intermediate and global level interconnects at both 11 nm and 8 nm technology node using latest ITRS-2013 parameters. It is found that irrespective of the technology nodes, doped perfectly specular MLGNR interconnects are marginally better as far as tolerance to line resistance variations is concerned. It is also noted that % of signal transmission delay variation is almost the same as the % line resistance variation, whereas % of peak noise voltage varies from ~1/4× to ~1/2× that of the % line resistance variation when ±40% variation is considered. Delay is found to be least affected due to line resistance variations (i.e., <3% delay variations) when center line resistance is at the nominal value. Finally, our analysis has shown that from the perspective of line resistance variations, perfectly specular, doped multilayer zigzag GNR interconnects are more advantagious to copper interconnects for future Integrated circuit technology generations.