High-Performance Resistance-Switchable Multilayers of Graphene Oxide Blended with 134-Oxadiazole Acceptor Nanocomposite

摘要

Graphene oxide (GO) has been actively utilized in nonvolatile resistive switching random access memory (ReRAM) devices due to solution-processability, accessibility for highly scalable device fabrication for transistor-based memory, and cross-bar memory arrays. Uncontrollable oxygen functional groups of GO, however, restrict its application. To obtain stable memory performance, 2-tert-butylphenyl-5-biphenyl-1,3,4-oxadiazole (PBD) a that can serve as 1,3,4-oxadiazole acceptor was carefully introduced onto the GO framework. Better stability was achieved by increasing the weight ratio of the chemical component from 2:1 to 10:1 in all GO-based solutions. Particularly, rewritable nonvolatile memory characteristics were dependent on the ratio between PBD and GO. PBD:GO devices with a proportion of 10:1 w/w exhibited better memory performance, possessed a higher ON/OFF ratio (>10²) at a lower switching voltage of −0.67 V, and had a long retention ability. The interaction between PBD and GO can be demonstrated by transmission electron microscope, scanning electron microscope, thermogravimetric analysis, fourier transform infrared spectra, Raman spectra, X-ray diffraction, and fluorescence spectra. The superior ReRAM properties of the multilayers of GO blended with the PBD nanocomposite are attributed to electron traps caused by the strong electron acceptors.