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A Novel Temperature Stable Current Mode Bandgap for Wide Range of Supply Voltage Variation

机译:适用于宽范围电源电压变化的新型温度稳定电流模式带隙

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A curvature corrected band gap reference (BGR) capable of generating sub-1-V output in standard CMOS process is proposed. It has the advantage over the prior arts in terms of accuracy of output voltage over wide temperature range while input supply voltage can undergo a large variation from 3 V to 1.5 V. Curvature correction of this BGR was done in a unique way by utilizing the temperature dependence of the base current in bipolar junction transistor (BJT). Stability of output voltage over wide range of supply voltage was ensured by using an improved self-biased amplifier. Spectre simulation of the proposed circuit showed that the output reference voltage at 716 mV has a temperature coefficient less than or equal to 2.7 ppm°C over-55°C to 125°C. Line regulation of the output reference voltage is less than 0.028% per Volt while supply voltage varies from 3 V to 1.5 V. Compatibility of proposed band gap at different technologies was confirmed by simulating the circuit in 0.18μ and 0.22μ CMOS process.
机译:提出了一种能够在标准CMOS工艺中产生低于1V的输出的曲率校正带隙基准(BGR)。在较宽的温度范围内,输出电压的精度方面具有优于现有技术的优势,而输入电源电压可在3 V至1.5 V的范围内变化。该BGR的曲率校正是通过利用温度以独特的方式完成的双极结型晶体管(BJT)中基极电流的依赖性。通过使用改进的自偏置放大器,可以确保在宽电源电压范围内输出电压的稳定性。拟议电路的幽灵仿真表明,在55 mC至125°C的温度下,716 mV的输出参考电压的温度系数小于或等于2.7 ppm°C。当电源电压在3 V至1.5 V之间变化时,输出参考电压的线路调整率小于0.028%/伏特。通过在0.18μ和0.22μCMOS工艺中对电路进行仿真,证实了不同技术下建议的带隙兼容性。

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