Measurement of gate delay in Armchair Graphene nanoribbon considering degeneracy factors

摘要

Armchair Graphene nanoribbons (A-GNRs) are widely used because of their semiconducting electronic properties in nano-sized transistor. One of the important electronic properties of A-GNR based device is capacitance formed in channel and another one is gate delay. The classical capacitance which is only determined by device geometry gives linear response. But when device is turn on and controlled by a gate voltage, classical capacitance does not give complete information of carrier transport through GNR channel. For this quantum capacitance must be considered. Upon classical capacitance, quantum capacitance as well as for gate capacitance calculation delay faced by carrier is observed. This work presents an calculation of the bandgap, classical and quantum capacitance considering two different regime like i) degenerate regime and ii) non-degenerate regime of A-GNRs. We will also observe the carrier concentration through the A-GNR for considering a degeneracy factor. Than from the mutual effect of capacitance gate delay will be observed by varying gate voltage. At last we will measure cutoff frequency from calculated gate delay.