Low-temperature direct wafer bonding for III-V compound semiconductors to nanometer-scale grating arrays

摘要

In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial layers on a silicon wafer.