Variable Intrinsic Region in CMOS PIN Photodiode for Ⅰ-Ⅴ Characteristic Analysis

摘要

In this paper presented an investigation on Ⅰ-Ⅴ characteristic for CMOS PIN Photodiode. PIN diodes are widely used in optics and microwave circuits as it acts as a current controlled resistor at these frequencies. PIN diode performance is greatly influenced by the geometrical size of the device, especially in the intrinsic region. Two different Ⅰ-layer thickness of PIN diode structure has been designed using Sentaurus Technology Computer Aided Design (TCAD) tools. The Ⅰ-layer thickness (or width) is varied from 4 to 8 μm in order to investigate its effects on the current-voltage (Ⅰ-Ⅴ) characteristics. These structures were design based on CMOS process.