The high temperature furnace for Liquid Phase Epitaxy (LPE) was developed by Swedish Space Corporation. It was developed for a Silicon Carbide liquid phase epitaxy microgravity experiment performed by Linkoping University, Sweden. The LPE is capable of processing materials up to 1900 °C in an ultra clean atmosphere or vacuum in accordance with requirements for semiconductor crystal growth. The LPE has the capability to heat and cool the samples rapidly due to a high power input and a cooling gas system, this makes it possible to utilise it for short duration microgravity flights. The samples can be processed in isothermal conditions or with a temperature gradient up to 5 °C/mm. The two resistive heaters are controlled individually which makes it possible for the user to pre-program an optional temperature profile for the experiment. The LPE was launched on the Swedish microgravity rocket MASER 7 at Esrange in May 1996. For the first time under microgravity conditions four SiC samples where processed successfully. SiC has in comparison with Si superior properties regarding power electronics [1]. However, the quality of the material needs to be improved considerably before commercial production. Growth from a solution may give rise to an impurity microsegregation and growth instabilities due to the gravitation-induced convection, presumably resulting in an alteration of the point defect assembly. Growth under microgravity is thus a key for a better understanding of the growth process and defect formation. The material grown in microgravity is improved compared with on-ground reference growth.
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