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A Novel 22.7 ppm/0C Voltage mode Sub-Bandgap Reference with robust startup nature

机译:一种新颖的22.7ppm/0C电压模式亚带隙基准源

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This paper proposes a voltage-mode CMOS bandgap reference circuit. Conventionally in current mode bandgaps, PTAT current generated in bandgap core is added with CTAT current generated using resistor across CTAT voltage to give a constant current. The resistor typically is high and occupies significant area. Further, this leads to multiple operating points and, therefore designing a reliable startup for the current mode bandgap is challenging. The proposed bandgap is designed by giving a fraction of the CTAT voltage to the base of BJT. This eliminates the use of resistor to generate CTAT current and has only 2 stable operating points. A prototype designed in 45nm TSMC CMOS technology for a nominal voltage of 450mV demonstrates 22.7 ppm/°C temperature coefficient from -40o C to 125oC, draws 11.8µA from a 1.05Vsupply.
机译:本文提出了一种电压模式CMOS带隙基准电路。传统上,在电流模式带隙中,带隙磁芯中产生的PTAT电流与CTAT电压上使用电阻器产生的CTAT电流相加,以提供恒定电流。电阻通常很高,占据很大的面积。此外,这会导致多个工作点,因此为电流模式带隙设计可靠的启动是一项挑战。通过将CTAT电压的一小部分提供给BJT的基极来设计所提出的带隙。这消除了使用电阻器来产生CTAT电流,并且只有2个稳定的工作点。采用45nm台积电CMOS工艺设计的原型,标称电压为450mV,温度系数为22.7ppm/°C,范围为-40

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