Read optimized MRAM with separate read-write paths based on concerted operation of magnetic tunnel junction with correlated material

摘要

We propose a technique based on connecting CM like VO in parallel with the MTJ in the read path of multi-port MRAMs. Utilizing insulator-metal transitions in CM, the proposed cell achieves 1.7X to 4.3X improvement in cell TMR (CTMR) along with 7% to 22% higher read disturb margin compared to a baseline cell. Due to the separation of read-write paths in multi-port MRAMs, the CM has no effect on the write operation. The proposed idea is not limited to VO and its benefits may be further enhanced by exploring other suitable CMs [6] or by tuning the properties like resistivities, critical currents and thermal stability by techniques like strain [7] or Cr doping [8].