Two dimensional (2D) crystal materials like graphene, MoS2, and hexagonal BN, have exciting electrical, mechanical, and optical properties [1]. Photo responses of 7.5mA/W [2] and 110mA/W [3] have been reported in MoS2 photodetectors. The upper limit of the spectral range in multi-layer MoS2 detectors is approximately 700nm, which is determined by the material bandgap [4]. Graphene photodetectors have a wide spectral range from 300 to 2500nm [5] but they have a lower response (0.25mA/W [6] and 1mA/W [7]) than to MoS2 devices. In this paper, we demonstrate a novel MoS2-graphene hetero junction photodetector spanning a wide spectral response from visible to infrared with a photoconduction responsivity of 24.2mA/W at 520nm and 2.1mA/W at 1.01μm.
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机译:二维(2D)晶体材料(例如石墨烯,MoS 2 inf>和六角形BN)具有令人兴奋的电,机械和光学特性[1]。 MoS 2 inf>光电探测器已经报道了7.5mA / W [2]和110mA / W [3]的光响应。多层MoS 2 inf>检测器中光谱范围的上限约为700nm,这由材料带隙确定[4]。石墨烯光电探测器的光谱范围从300到2500nm [5],但它们对MoS 2 inf>器件的响应较低(0.25mA / W [6]和1mA / W [7])。在本文中,我们展示了一种新颖的MoS 2 inf>-石墨烯异质结光电探测器,该探测器在可见光到红外光之间具有宽光谱响应,在520nm处的光导响应率为24.2mA / W,在1.01μm处的光导响应率为2.1mA / W。 。
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