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Multi-physics Modelling and Experimental Investigation – An Original Approach for Laser-Dicing/Grooving Process Optimization

机译:多物理建模与实验研究 - 一种激光切割/开槽工艺优化的原创方法

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The highly complex technology requirements of today's integrated circuits (ICs), lead to the increasingly use of several materials types such as metal structures, brittle dielectrics, porous low-k and ultra-low-k materials which are used in both front-end-of-line (FEOL) and back-end-of-line (BEOL) process for wafer manufacturing. In order to singulate chips from wafers, a critical laser-grooving process, prior to blade dicing, is used to remove these layers of materials out of the dicing street. The combination of laser-grooving and blade dicing allows to reduce the potential risk of induced mechanical defects such micro-cracks, chipping, on the wafer top surface where circuitry is located. Nevertheless, challenges related to unexpected drawbacks on process such as efficiency, quality and reliability still remain. To maximize control of this critical process and reduce its undesirable effects, numerical models of nano-second laser pulsed and multi-stack material interaction have been developed. The modeling strategy using finite elements formalism is based on the convergence of two approaches, numerical and experimental Validation. To evaluate this interaction, several laser grooved samples were performed using IBM 14 nm technology node wafer and were correlated with finite elements modeling. Three different aspects were studied; phase change, thermo-mechanical and optical sensitive parameters. The numerical model makes it possible to simulate groove profile (depth, width, etc.) of a single pulse or multi-pulses on BEOL wafer material. Moreover, the heat-affected zone (HAZ) has been estimated as a function of laser operating parameters (power, frequency, spot size, defocus, speed, etc.). After modeling validation and calibration, a reasonable agreement between experiment and modeling results has been observed in terms of groove depth, width and HAZ
机译:当今集成电路(IC)的高度复杂技术要求,导致越来越多的材料类型,如金属结构,脆性电介质,多孔低k和超低k材料,它们都在前端 - 晶圆制造的线(FEOL)和后端线(BEOL)过程。为了从晶片中拼接芯片,在叶片切割之前,临界激光槽工艺用于将这些材料层从切割街中移出。激光槽和叶片切割的组合允许降低诱导机械缺陷这种微裂缝,碎裂的潜在风险,在电路所在的晶片顶表面上。尽管如此,仍然存在与效率,质量和可靠性等进程的意外缺点相关的挑战。为了最大限度地控制这种关键过程并减少其不希望的效果,已经开发了纳米第二激光脉冲和多堆材料相互作用的数值模型。使用有限元形式主义的建模策略基于两种方法的收敛,数值和实验验证。为了评估这种相互作用,使用IBM 14 NM技术节点晶片进行几个激光沟槽样本,并与有限元建模相关。研究了三个不同的方面;相变,热机电和光敏参数。数值模型使得可以在BEOL晶片材料上模拟单脉冲或多脉冲的凹槽轮廓(深度,宽度等)。此外,估计了热影响的区域(HAZ)作为激光操作参数的函数(功率,频率,点尺寸,散焦,速度等)。在建模验证和校准后,在沟槽深度,宽度和危险方面已经观察到实验和建模结果之间的合理协议

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