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Development of double-sided with double-chip stacking structure using panel level embedded wafer level packaging

机译:使用面板级嵌入式晶圆级封装开发双面双芯片堆叠结构

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In recent years, consumer electronics demand has been geared towards lightweight, high capacity, and high efficiency small form factor devices. These characteristics can be achieved by using three-dimensional (3D) integrated circuit (IC) technology. This study proposes a double-chip stacking structure in an embedded fan-out wafer level packaging (WLP) with double-sided interconnections. This structure consists of two or more thin dies, chip carriers, through mold vias (TMV), and interconnection structures. The thermal performance of the proposed packaging structure is examined and discussed by using finite element (FE) analysis. An FE model of the WLP is also established to compare the thermal performance of conventional WLP and the proposed packaging structure. The proposed packaging structure has a larger size and silicon carrier, which reduces its thermal resistance from 49 °C/W to 39 °C/W. By adopting the proposed design guidelines, including carrier material selection, and designating thermal vias and chip/package size ratios, FE analysis determined that the thermal performance of the proposed packaging structure can be further improved, thereby enhancing its suitability for applications with high power density.
机译:近年来,消费电子产品的需求已转向轻巧,高容量和高效的小尺寸设备。这些特征可以通过使用三维(3D)集成电路(IC)技术来实现。这项研究提出了一种具有双面互连的嵌入式扇出晶圆级封装(WLP)中的双芯片堆叠结构。该结构由两个或更多个薄管芯,芯片载体,模制通孔(TMV)和互连结构组成。通过使用有限元(FE)分析来检查和讨论所提出的包装结构的热性能。还建立了WLP的有限元模型,以比较常规WLP的热性能和建议的封装结构。所提出的封装结构具有更大的尺寸和硅载体,从而将其热阻从49°C / W降低到39°C / W。通过采用建议的设计指南,包括选择载体材料,指定散热孔和芯片/封装尺寸比,FE分析确定可以进一步改善建议的封装结构的热性能,从而提高其对高功率密度应用的适用性。

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