Reduced graphene oxide based Schottky diode on flex substrate for microwave circuit applications

摘要

This paper demonstrates fabrication and characterization of reduced graphene oxide (RGO) based Schottky diodes on a flexible substrate. Current-voltage measurements on the fabricated devices show strong non-linearity. Diodes are tested for high frequency applications such as detection, frequency multiplication and mixing over a frequency range of 1–18 GHz. The devices show third order frequency multiplication for measured fundamental frequencies of 1, 2, 3, and 4 GHz and shows low-loss frequency mixing. Details of DC characteristics, RF rectification, mixing and multiplication using RGO Schottky diodes are presented.