SPICE Modeling of Light Induced Current in Silicon with 'Generalized' Lumped Devices

摘要

SPICE-compatible modeling with generalized lumped devices is used to simulate the spatial and time dependence of photogenerated carriers with standard circuit simulators. Equivalent voltages and currents are used in place of minority carrier excess concentrations and minority carrier currents respectively. The initial light-induced excess carrier concentration in silicon is accounted by means of distributed external voltage sources. Generation, propagation and collection of these minority carriers is analyzed for three pertinent structures and compared with TCAD numerical simulations.