Refractive index properties of oxygenated amorphous CdS thin film deposited by rf-sputtering

摘要

The refractive index of 1.21 to 2.38 of oxygenated amorphous CdS thin films can be fabricated by using reactive RF-Sputtering from CdS target of 4N of purity. The oxygenated amorphous CdS with 2.3 of refractive index has a band gap of 2.5 e V. These properties are optically appropriate for matching the ITO and CdTe thin films in amorphous-CdS/CdTe solar cells application. For 10–20% of Oxygen/Argon and 50–70 Watts of the RF-Sputtering power, all thin film shows high transmittance, low refractive index of 1.21 and 3.7 eV of band gap. XRD spectra shows amorphous evidence. This thin film could be used as an antireflective layer on glass substrate.