The rapid growth of communication systems demands for wide tunable low loss microwave components. Barium strontium titanate (BST) voltage dependent permittivity has shown a great potential impact for the fabrication of frequency agile components. In this work, the indium tin oxide (ITO) high resistive thin layer is used as a bottom electrode to tune BST based structures such as parallel plate capacitor and CPW line. The tunability is reduced due to voltage drop in the ITO layer which exhibits a high dc resistance. The effect of using ITO thin layer in microwave device is explored.
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