首页> 外文会议>International Conference on Infrared, Millimeter, and Terahertz Waves >Real-time CMOS terahertz camera employing plane-to-plane imaging with a focal-plane array of field-effect transistors
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Real-time CMOS terahertz camera employing plane-to-plane imaging with a focal-plane array of field-effect transistors

机译:实时CMOS太赫兹摄像机采用平面到平面成像,具有焦平面曲线效应晶体管阵列

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We present a terahertz camera working at 590 GHz at real-time frame-rates of 16 frames per second (fps). An array of 12×12 field-effect transistors has been fabricated in a 150-nm CMOS process and is used as the camera's image sensor. The averaged single-pixel noise-equivalent-power is 43 pW/√Hz, the voltage single-pixel responsivity is 340 V/W. For an effective power of 104 µW distributed over the sensor area and a single-pixel integration time of 2.5 ms, a dynamic range of more than 10 dB for full-frame images at 33 Hz update rate is observed. The array, which does not yet contain integrated preamplifiers, serves as a test-bed for the development of heterodyne imaging also to be described in the presentation.
机译:我们在每秒16帧(FPS)的实时帧速率下,在590 GHz工作的太赫兹相机。在150nm CMOS工艺中制造了12×12场效应晶体管的阵列,并用作相机的图像传感器。平均单像素噪声等效功率为43 PW /√Hz,电压单像素响应率为340 V / w。对于分布在传感器区域上的104μW的有效功率和2.5ms的单像素积分时间,观察到以33 Hz更新速率为33 Hz更新速率的大于10 dB的动态范围。漫游尚未包含集成前置放大器的阵列用作外差成像的试验床,该呈现也可在呈现中描述。

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